记忆电阻器
XNOR门
通流晶体管逻辑
逻辑门
数字电子学
逻辑族
桥接(联网)
组合逻辑
逻辑优化
计算机科学
电子工程
时序逻辑
可编程逻辑器件
逻辑综合
电阻器–晶体管逻辑
电子线路
工程类
电气工程
计算机硬件
与非门
计算机网络
作者
Bowen Su,Jueping Cai,Yuxin Zhang,Yiding Wang,Shuaili Wang,Kejun Wen
标识
DOI:10.1016/j.mejo.2022.105674
摘要
A 1T2M logic gate design inspired by MRL logic is presented in this paper and a variety of applications based on 1T2M units are promoted. The innovation of this topic is to use the non-volatile nature of memristors with the advantage of small area and volume to constitute a NOT logic with storage function for bridging the gap of memristor-based circuits in the design of NOT gates with the MRL structure instead of transistors in conventional inverters. 1T2M is used in the improved XOR/XNOR logic, and on this basis the combinational logic circuit is designed so as to adapt to more digital circuit, in which the consumption is reduced by the high proportion of memristor in circuit. The implementations of the 1T2M structure demonstrates that 1T2M cell makes an excellent contribution to reducing circuit area and consumption through multiple comparisons. Thus the way is paved for simulating the logic function of dendrites and implementing artificial neural networks at large scale.
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