材料科学
结晶
钙钛矿(结构)
能量转换效率
表面工程
工程物理
退火(玻璃)
热稳定性
纳米技术
化学工程
光电子学
复合材料
工程类
作者
Shaomin Yang,Yuwei Duan,Zhike Liu,Shengzhong Liu
标识
DOI:10.1002/aenm.202201733
摘要
Abstract All‐inorganic CsPb X 3 ( X = I, Br, Cl or their mixtures) perovskites attract enormous attention in recent years due to their excellent optoelectronic properties, outstanding thermal/light stability, and wide range of applications in electronic devices. Encouragingly, the reported power conversion efficiency of CsPb X 3 perovskite solar cells (PSCs) rockets up from 2.9% in 2015 to the present 21.0%. In order to further promote the performance of CsPb X 3 PSCs toward the Shockley–Queisser efficiency limit, it is important to optimize the quality of perovskite films by crystallization kinetics modulation and defect suppression. In this review, first, some fundamental information about all‐inorganic CsPb X 3 perovskites is briefly introduced, including the crystallization mechanism, growth mode, crystal structure, and phase stability as well as possible defects and their effects on device performance. Second, the recent exciting progress of the crystallization modulation strategies for high‐quality CsPb X 3 films is summarized and discussed in detail. The advantages of different strategies, including annealing engineering, solvent engineering, precursor engineering, composition engineering, and interface engineering, are highlighted. Finally, methods for improving the efficiency of inorganic PSCs are discussed, and the future development prospects of inorganic PSCs are also outlined.
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