材料科学
场效应晶体管
纳米技术
领域(数学)
晶体管
工程物理
光电子学
场效应
电气工程
数学
工程类
电压
纯数学
作者
Hwarim Im,Joo‐On Oh,Yuseong Lee,Eun Kyo Jung,Eunho Kim,Jun Ho Lee,Ji-Min Kim,Muhammad Naqi,Yong‐Sang Kim,Sunkook Kim
标识
DOI:10.1002/adma.202408034
摘要
Abstract This study investigates a micro light‐emitting diode (µLED) pixel circuit using the heterogeneous integration of complementary field‐effect transistors (CFETs). The CFETs are fabricated using a semiconductor layer composed of tellurium (Te) and indium‐gallium‐zinc oxide (IGZO) layers. Te and IGZO layers in the heterostructure IGZO/Te film exhibit hexagonal and amorphous phases, respectively, indicating that each layer maintains independent material characteristics. The fabricated IGZO/Te CFETs exhibit ambipolar behavior with a turn‐on voltage of 2.0 V and field‐effect mobility of 0.74 and 1.42 cm 2 V −1 s −1 for p‐type and n‐type channels, respectively. Inverters comprising IGZO/Te CFET and IGZO TFT exhibit inverting behavior. A µLED pixel circuit is designed using IGZO/Te CFETs based on pulse width modulation (PWM). The proposed circuit uses an inverter structure with IGZO/Te and IGZO to control the emission time, suppressing the wavelength shift of µLEDs depending on the µLED current levels. The operation of the proposed pixel circuit is investigated through simulation and measurement of the fabricated circuit. The fabricated µLED pixel circuit successfully exhibits PWM operation, controlling the emission time and luminance. Consequently, IGZO/Te CFETs show promise as devices for high‐quality µLED displays.
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