材料科学
场效应晶体管
纳米技术
领域(数学)
晶体管
工程物理
光电子学
电气工程
数学
电压
纯数学
工程类
作者
Hwarim Im,Joo‐On Oh,Yuseong Lee,Eun Kyo Jung,Eunho Kim,Jun Ho Lee,Ji-Min Kim,Muhammad Naqi,Yong‐Sang Kim,Sunkook Kim
标识
DOI:10.1002/adma.202408034
摘要
This study investigates a micro light-emitting diode (µLED) pixel circuit using the heterogeneous integration of complementary field-effect transistors (CFETs). The CFETs are fabricated using a semiconductor layer composed of tellurium (Te) and indium-gallium-zinc oxide (IGZO) layers. Te and IGZO layers in the heterostructure IGZO/Te film exhibit hexagonal and amorphous phases, respectively, indicating that each layer maintains independent material characteristics. The fabricated IGZO/Te CFETs exhibit ambipolar behavior with a turn-on voltage of 2.0 V and field-effect mobility of 0.74 and 1.42 cm
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