堆积
纳米技术
异质结
化学气相沉积
材料科学
过渡金属
自旋电子学
工程物理
光电子学
化学
铁磁性
工程类
物理
凝聚态物理
催化作用
生物化学
有机化学
作者
Hui Zeng,Yao Wen,Lei Yin,Ruiqing Cheng,Hao Wang,Chuansheng Liu,Jun He
标识
DOI:10.1007/s11467-023-1286-2
摘要
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest, and show great potential in electronic, optoelectronic, spintronic and valleytronic fields. Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures. Due to the low cost, high yield and industrial compatibility, chemical vapor deposition (CVD) is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures. Here, state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed, including wafer-scale synthesis, phase transition, doping, alloy and stacking engineering. Meanwhile, recent progress on the application of multi-functional devices is highlighted based on 2D TMDs. Finally, challenges and prospects are proposed for the practical device applications of 2D TMDs.
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