微电子机械系统
CMOS芯片
材料科学
流量传感器
线性范围
光电子学
物理
数学
声学
统计
检出限
作者
Wei Xu,Zhijuan Li,Zetao Fang,Bo Wang,Linze Hong,Gai Yang,Su‐Ting Han,Xiaojin Zhao,Xiaoyi Wang
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2024-05-01
卷期号:59 (5): 1486-1496
被引量:1
标识
DOI:10.1109/jssc.2023.3314765
摘要
This article presents a complementary metal-oxide semiconductor (CMOS)-microelectromechanical system (MEMS) monolithic integrated thermal flow sensor system, which consists of a MEMS sensor with dual pairs of thermistors, a precise constant temperature difference (CTD) control circuit, and a low-noise readout circuit with a current feedback instrument amplifier (CFIA). The MEMS sensor is fabricated using an in-house developed post-CMOS process, while its sensing structure is thinned to 2.52 $\mu \text{m}$ for power reduction. Meanwhile, the distance between the microheater and thermistors is optimized with a linear range of larger than ±4 m/s by the Peclet number (Pe) < 1 criterion. The designed CTD control circuit can offer a driving current of 1.88 mA with an output swing of up to 2.82 V, which enables the microheater to operate in 50-K CTD mode with a deviation of less than 0.01 K. Additionally, the designed CFIA has a noise floor of 12.4 nV/rtHz with a 1/f corner of less than 400 mHz. The performance of the system-on-chip (SoC) sensor is evaluated with N2 gas flow. The SoC sensor has a high sensitivity of 156 mV/(m/s) with a detectable flow range of up to ±11 m/s, while its system power is less than 5 mW. The SoC sensor also has state-of-the-art linearity in a range of ±6 m/s and a detection limit down to 86 $\mu \text{m}$ /s. Moreover, the tested results of this SoC sensor are in good agreement with the theoretical models, confirming the feasibility of the proposed design strategy.
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