光探测
光电探测器
响应度
光电子学
材料科学
量子效率
光电流
量子点
异质结
超短脉冲
光电二极管
暗电流
比探测率
制作
光学
激光器
物理
替代医学
病理
医学
作者
Subhankar Debnath,Koushik Ghosh,M. Meyyappan,P. K. Giri
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2023-01-01
卷期号:15 (33): 13809-13821
摘要
Two-dimensional (2D) semiconducting material-based photodetectors (PDs) with high responsivity and fast photo-response are of great interest for various applications such as optical communications, biomedical imaging, security surveillance, environmental monitoring, etc. Additive manufacturing such as 2D printing is a potentially less cumbersome and cost-effective alternative to conventional microdevice fabrication processes used in the production of PDs. Here, we have fabricated a Si/WS2 quantum dot-based heterostructure PD with a very short electrode gap of 40 μm by a simple printing process. The printed p-Si/n-WS2 PD shows an excellent photo-to-dark current ratio of 5121 under 405 nm illumination (23.8 mW cm-2). The printed photodetector exhibits a peak responsivity of 126 A W-1 and a peak detectivity of 9.24 × 1012 Jones over a very broad wavelength range (300-1100 nm), which is much superior to commercial Si PDs. A high external quantum efficiency of 3.9 × 104% and an ultrafast photoresponse (7.8 μs rise time and 9.5 μs fall time) make the device an attractive candidate as an efficient photodetector. The origin of high-performance photodetection is traced to a nearly defect-free interface at the heterojunction, leading to highly efficient charge separation and high photocurrent. Finally, the 2D-printed device exhibits good photodetection even in self-powered conditions, which is very attractive.
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