Fully-transparent self-powered ultraviolet photodetector based on GaOx/ZnO heterojunction for solar-blind imaging

With the development of fully-transparent electronic materials and energy-efficient photodetectors, self-powered deep-ultraviolet photodetectors that are fully transparent are expected to have a wide range of applications in solar-blind imaging. Here, we present the first investigation of a self-powered, fully transparent Ga2O3 deep-ultraviolet photodetector array for solar-blind imaging. The device is composed of an amorphous Ga2O3/ZnO heterojunction (GaOx/ZnO) with indium tin oxide (ITO) transparent electrodes, which was prepared using a fully magnetron sputtering method. The fully-transparent device demonstrates exceptional performance at both − 5 V bias and 0 V bias, with a high responsivity of 6.5 × 103 A/W and 13 mA/W, respectively, coupled with excellent stability. Moreover, the device is self-powered due to the built-in electric field formed at the interface of GaOx and ZnO, which efficiently drives carrier motion and generates photocurrent. Finally, we demonstrate the feasibility of transparent devices for solar-blind imaging at 0 V bias by constructing a 5 × 4 GaOx/ZnO heterojunction solar-blind photodetector array, which produces a high-contrast image of the target object. This work provides a new strategy for developing Ga2O3-based fully-transparent self-powered photodetector arrays for solar-blind imaging.