Interface thermal resistance of micron-thin film

The utilize of multilayer stacked structure dielectric is very common in electrical engineering, such as thin film capacitor wound by multilayer dielectric, and oil paper cable insulation layer formed by multilayer oil paper winding. Interface thermal resistance between dielectric layers are crucial thermo-physical parameters, which are very important for the thermal management of electric devices to improve the operating stability. However, there are some difficulties in precisely measuring thermal resistance parameters between micron-thin films by conventional ways. In this paper, a novel method is proposed for measuring thermal resistance parameters between films based on the thermal pulse method, which is normally used for mapping space charge or electric field distribution. The sample in this paper is of a multilayer structure containing at least one insulating dielectric film. The parameters of the interface thermal resistance of the multilayer structure are obtained by simulating and analyzing the thermal response current characteristics of the dielectric film. To study the characteristics of interface thermal resistance, several different thin film interfaces were designed by changing the type of thermal interface materials and the roughness of the contact surface. The obtained data of the interface thermal resistance show well consistence with the theoretical expectation.