High electrical conductivity in a mixed-valence metal-organic framework

Electrically conductive metal-organic frameworks (MOFs), as a unique class of multifunctional electronic materials, have attracted much attention due to their tunability of electronic and micro-porosity properties. Herein, we demonstrate the synthesis of a mixed-valence Cu-MOF with a typical semiconducting nature and high electrical conductivity of about 95 S/cm at room temperature. Detailed X-ray absorption techniques confirm the π-d conjugated structure, the existence of sulfur vacancies and the mixed-valence of Cu ions. Theoretical calculations further verify the semiconducting character induced by the sulfur vacancies. Our work will inspire further exploration of the electronic properties of MOFs and will pave the way for the application in next-generation electronic devices.