Si/CuO Heterojunction‐Based Photomemristor for Reconfigurable, Non‐Volatile, and Self‐Powered In‐Sensor Computing

Abstract In‐sensor computing has attracted considerable interest as a solution for overcoming the energy efficiency and response time limitations of the traditional von Neumann architecture. Recently, emerging memristors based on transition‐metal oxides (TMOs) have attracted attention as promising candidates for in‐memory computing owing to their tunable conductance, high speed, and low operational energy. However, the poor photoresponse of TMOs presents challenges for integrating sensing and processing units into a single device. This integration is crucial for eliminating the need for a sensor/processor interface and achieving energy‐efficient in‐sensor computing systems. In this study, a Si/CuO heterojunction‐based photomemristor is proposed that combines the reversible resistive switching behavior of CuO with the appropriate optical absorption bandgap of the Si substrate. The proposed photomemristor demonstrates a simultaneous reconfigurable, non‐volatile, and self‐powered photoresponse, producing a microampere‐level photocurrent at zero bias. The controlled migration of oxygen vacancies in CuO result in distinct energy‐band bending at the interface, enabling multiple levels of photoresponsivity. Additionally, the device exhibits high stability and ultrafast response speed to the built‐in electric field. Furthermore, the prototype photomemristor can be trained to emulate the attention‐driven nature of the human visual system, indicating the tremendous potential of TMO‐based photomemristors as hardware foundations for in‐sensor computing.