Analysis of warpage of a flip-chip BGA package under thermal loading: Finite element modelling and experimental validation

球栅阵列 材料科学 有限元法 模具(集成电路) 倒装芯片 复合材料 热膨胀 弯曲 曲率 结构工程 几何学 数学 工程类 纳米技术 胶粘剂 焊接 图层(电子)
作者
Abdellah Salahouelhadj,Mario González,Kris Vanstreels,Geert Van der Plas,G. Beyer,Eric Beyne
出处
期刊:Microelectronic Engineering [Elsevier BV]
卷期号:271-272: 111947-111947 被引量:7
标识
DOI:10.1016/j.mee.2023.111947
摘要

The objective of this study is to investigate warpage of a Flip-Chip Ball Grid Array (FCBGA) package experimentally and numerically. Projection Moiré technique was used to measure full-field warpage during heating experiment from room temperature up to 250 °C. As temperature changes within the FCBGA package, different thermal strains are generated in the package resulting from the mismatch in the Coefficient of Thermal Expansion (CTE) between the constituent material layers. A finite element model and analytical equations based on the classical bending theory were used to analyze the thermally induced deformations of package under test. The results show that a maximum warpage value of 67 μm with a concave or smiling shape occurred at the neighborhood of 70 °C during heating and 87 μm warpage with a convex crying shape at 250 °C by assuming a stress-free temperature at 175 °C. Warpage analysis showed that the studied FCBGA package exhibits a different curvature in the die region at the center of the package compared to the region outside the die. At temperatures higher than 175 °C, a concave or smiling warpage shape was shown in the die region while a convex or crying shape in the region outside the die. In contrast, at room temperature, the die area has a convex shape warpage, while outside this area presented a concave shape. Furthermore, the good agreement between warpage of the studied package from finite element simulation and measurements was achieved thanks to the use of the measured material's thermal-mechanical properties of the substrate and Molding Compound (MC) rather than using datasheet data. In-plane CTE and Young's modulus of the substrate were measured using stereo-digital image correlation. Moreover, temperature dependent Young's modulus of the MC was measured by nanoindentation.
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