Ahmad R. Kirmani,David P. Ostrowski,Kaitlyn VanSant,Todd A. Byers,Rosemary C. Bramante,Karen N. Heinselman,Jinhui Tong,Bart Stevens,William Nemeth,Kai Zhu,Ian R. Sellers,Bibhudutta Rout,Joseph M. Luther
出处
期刊:Nature Energy [Springer Nature] 日期:2023-01-26卷期号:8 (2): 191-202被引量:40
Perovskite photovoltaics are attractive for both terrestrial and space applications. Although terrestrial conditions require durability against stressors such as moisture and partial shading, space poses different challenges: radiation, atomic oxygen, vacuum and high-temperature operation. Here we demonstrate a silicon oxide layer that hardens perovskite photovoltaics to critical space stressors. A 1-μm-thick silicon oxide layer evaporated atop the device contacts blocks 0.05 MeV protons at fluences of 1015 cm−2 without a loss in power conversion efficiency, which results in a device lifetime increase in low Earth orbit by ×20 and in highly elliptical orbit by ×30. Silicon-oxide-protected Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3) (MA, methylammonium; FA, formamidinium cation) and CsPbI2Br cells survive submergence in water and N,N-dimethylformamide. Furthermore, moisture tolerance of Sn-Pb and CsPbI2Br devices is boosted. Devices are also found to retain power conversion efficiencies on exposure to alpha irradiation and atomic oxygen. This barrier technology is a step towards lightweight packaging designs for both space and terrestrial applications. Perovskite photovoltaics are promising for space applications, but their reliability needs to be addressed. Now, Kirmani et al. present a 1-μm-thick silicon oxide that affords protection against protons, alpha particles and atomic oxygen.