压电
铁电性
虚假关系
压电响应力显微镜
不对称
补偿(心理学)
电压
材料科学
符号(数学)
偏压
凝聚态物理
信号(编程语言)
表面电荷
光电子学
物理
电介质
计算机科学
电气工程
复合材料
数学
工程类
程序设计语言
机器学习
数学分析
精神分析
量子力学
心理学
作者
Huan Tan,Jike Lyu,Yunwei Sheng,Pamela Machado,Tingfeng Song,Akash Bhatnagar,Mariona Coll,F. Sánchez,J. Fontcuberta,Ignasi Fina
标识
DOI:10.1016/j.apsusc.2022.154991
摘要
Piezoelectric force microscopy (PFM) has demonstrated to be a powerful tool to characterize ferroelectric materials. However, extrinsic effects, most notably, those resulting from surface charges, often mask or mirror genuine piezoelectric response, challenging PFM data understanding. The contribution of surface charges to PFM signal is commonly compensated by using appropriate external bias voltage, which is ad-hoc selected and sample dependent. Here, we determine the compensating voltage in thin films of different ferroelectric materials and we compare with the corresponding I-V characteristics recorded using suitable electrodes. It turns out that the sign and magnitude of the bias voltage required to compensate the surface charges are related to the asymmetry of the I-V characteristics. We propose that this relation results from the fact that the semiconducting properties of the material determine both the I-V dependence, and the sign of charged adsorbates. We show how to make use of this correlation to predict the required compensation voltage of a non-ferroelectric material and we show that spurious piezoelectric-like contributions are largely cancelled. The results provide guidelines to mitigate common extrinsic contributions in PFM imaging.
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