First near-UV hybrid integrated laser in the Al2O3 platform

Hybrid integrated diode lasers offer a robust and small-sized solution for applications in telecommunications, quantum optics and metrology due to their wide tunability and ultra-narrow linewidth. Here, we present the fabrication, packaging and successful operation of the first fully integrated, aluminum oxide (Al2O3) based, hybrid diode laser operating at 405 nm. Low-loss, high-confinement waveguides are fabricated with a measured propagation loss of only 2.8 ± 0.3 dB/cm. The hybrid laser consists of a GaN SLED butt-coupled to an Al2O3 feedback circuit comprising of two microring resonators that form a frequency selective Vernier filter. The chip assembly is packaged in a hermetically sealed, butterfly housing for optimal performance and durability. The laser shows a maximum output power of 0.74 mW and is tunable over the entire gain bandwidth of 4.4 nm.