材料科学
钝化
光电子学
钙钛矿(结构)
Crystal(编程语言)
单晶
发光二极管
二极管
发光
载流子寿命
纳米技术
结晶学
图层(电子)
硅
程序设计语言
计算机科学
化学
作者
Lutao Li,Yun Hang Hu,Yuan Chen,Chen Wang,Guoxiang Zhao,Xinyu Du,Chaoqiang Wang,Lingbo Xiao,Zheng Lu,Jiong Wang,Dan Wang,Jiansheng Jie,Jingsong Huang,Guifu Zou
标识
DOI:10.1002/adfm.202301205
摘要
Abstract High color purity is one of the important features for single‐crystal metal halide perovskite light‐emitting diode (LED). Despite single‐crystal perovskite showing low bulk defect concentration, single‐crystal perovskite LEDs do not exhibit high color purity advantage due to the absence of effective surface defect passivation. Herein, one fully wrapped structure is proposed to passivate the surface of the free‐standing CsPbBr 3 single‐crystal films. The surface of CsPbBr 3 single‐crystal films is wrapped by ultra‐thin polymethyl methacrylate, precisely controlling the thickness. The single‐crystal perovskite film device can achieve high color purity with a full width at half maximum (FWHM) of 15.8 nm) and a large luminescent area of 2.25 mm 2 . It is observed that surface passivation is due to interaction of CO bond in polymer chains with the Lewis acid PbBr 2 . The passivated perovskite single‐crystal films significantly improve carrier lifetime and suppress surface defects. It is noteworthy that the passivated free‐standing single‐crystal perovskite films are feasible to build up a vertical LED device structure, avoiding the edge glowing and short‐circuiting of the LED device. This study demonstrates the large luminescent area of the high‐quality millimetre‐scale free‐standing single‐crystal films for wide color gamut display and vertical optoelectronic devices.
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