Modelling the annealing of poly-Si/SiOx/c-Si junctions

We use the MarcoPOLO model for the calculation of recombination and contact resistances of poly-Si-based junctions (such as POLO or TOPCon) to quantify the density of states Dit,cSi at the SiOx/c-Si interface of n+/n-type poly-Si based junctions during annealing. We compare the calculations to measurements of the recombination parameter, contact resistance and temperature-dependent contact resistance measurements and describe these measurements with the same set of parameters. We find that a constant Dit,cSi can explain the change of the recombination parameter J0 with increasing annealing temperature. The MarcoPOLO model allows the structural analysis and hence paths for the optimization of poly- Si junctions by e.g. a shallow diffusion below the interfacial oxide.