铁电性
材料科学
压力(语言学)
自行车
电阻式触摸屏
光电子学
铪
温度循环
光谱学
电气工程
锆
冶金
语言学
哲学
物理
考古
电介质
量子力学
热的
气象学
历史
工程类
作者
Wonjun Shin,Ryun‐Han Koo,Kyung Kyu Min,Been Kwak,Dongseok Kwon,Daewoong Kwon,Jong‐Ho Lee
摘要
We propose an accurate and effective method, low-frequency noise (LFN) spectroscopy, to examine the resistive switching mechanism in ferroelectric tunnel junctions (FTJs) based on pure hafnium oxide (HfOx). Contrary to previous studies that primarily focused on the ferroelectric (FE) resistive switching (RS) in HfOx-based FTJs, the results of this study demonstrate that non-FE RS affected by the redistribution of oxygen vacancies also plays a significant role in determining the performance of FTJs. LFN spectroscopy is conducted in different conditions by changing the operating temperature and inducing DC cycling stress. The results reveal that the RS mechanism changes from FE to non-FE RS with increased program bias in all conditions. This change is facilitated by the rise in temperature and the number of DC cycling stress.
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