Mn‐doped Pb(In1/2Nb1/2)O3‐Pb(Mg1/3Nb2/3)O3‐PbTiO3 relaxor ferroelectric ceramics for high‐power piezoelectric applications

Abstract Achieving comprehensive improvement in both piezoelectric coefficient ( d 33 ) and mechanical quality factor ( Q m ) has become a key issue in the research of high‐power piezoelectric ceramics. Here, we focused on Mn‐doped Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Sc 1/2 Nb 1/2 )O 3 ‐PbTiO 3 (PIN‐PSN‐PT) relaxor ferroelectric ceramics, where Mn‐doping is employed to enhance Q m . The effects of doping concentration and PT content on phase structure, ferroelectric, dielectric, and electromechanical properties were systematically studied. The well radius matching between Mn ions and B‐site ions facilitates the ion substitution and significantly increases the concentration of oxygen vacancies, thereby enhancing the domain wall pinning effect. A significantly weakened mutual constraint relationship between d 33 and Q m is observed in the 2 mol% Mn‐doped PIN‐PSN‐PT ceramics with tetragonal phase, which exhibits Q m exceeding 3000 while maintaining d 33 higher than 320 pC/N and Curie temperature higher than 300°C, leading to the vibration velocity over 1.15 m/s. Rayleigh analysis reveals the higher intrinsic piezoelectric response in high PT components compared to that in low PT components, which was thought to be the origin for the weakened mutual constraint relationship between d 33 and Q m in tetragonal Mn‐doped PIN‐PSN‐PT ceramics.