铌酸锂
光电探测器
光学
材料科学
石墨烯
光电子学
波导管
异质结
物理
纳米技术
作者
Tingfei YUAN,Qiaonan Dong,Xinxing Sun,LANG GAO,yong zheng,Ke Wang,Rongbo Wu,Ya Cheng
出处
期刊:Optics Letters
[The Optical Society]
日期:2024-09-27
卷期号:49 (20): 5969-5969
摘要
We demonstrate an on-chip photodetector by integrating a graphene and topological insulator Bi 2 Te 3 heterostructure on a thin-film lithium niobate waveguide. Lithium niobate on insulator (LNOI) waveguides are fabricated by the photolithography-assisted chemical mechanical etching method. The bismuth telluride (Bi 2 Te 3 ) and graphene heterostructure design provides enhanced photocurrent due to the effective photocarrier generation. The lithium niobate waveguide-integrated Bi 2 Te 3 /graphene heterojunction presents a high absorption coefficient of 2.1 dB/µm. The Bi 2 Te 3 /graphene heterojunction photodetector exhibits a responsivity of 2.54 mA/W without external bias at a 1.55 µm wavelength, which is enhancement of sevenfold as compared to the pure graphene-based photodetector. The photodetector has a 3 dB bandwidth of over 4.7 GHz. This work provides a potentially viable method for a self-powered, high responsivity, and fast response of the photodetector integrated with the LNOI photonic platform.
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