材料科学
肖特基势垒
异质结
硅化物
肖特基二极管
热稳定性
光电子学
退火(玻璃)
欧姆接触
硅
工作职能
二极管
图层(电子)
复合材料
化学工程
工程类
作者
M. Wzorek,Marek Ekielski,Krzysztof Piskorski,Jarosław Tarenko,Michał A. Borysiewicz,Ernest Brzozowski,Andrzej Taube
出处
期刊:Electronics
[MDPI AG]
日期:2024-08-29
卷期号:13 (17): 3429-3429
标识
DOI:10.3390/electronics13173429
摘要
In this study, metal–silicide-based contacts to GaN-cap/AlGaN/AlN-spacer/GaN-on-Si heterostructure were investigated. Planar Schottky diodes with Cu-covered anodes comprising silicide layers of various metal–silicon (M–Si) compositions were fabricated and characterized in terms of their electrical parameters and thermal stability. The investigated contacts included Ti–Si, Ta–Si, Co–Si, Ni–Si, Pd–Si, Ir–Si, and Pt–Si layers. Reference diodes with pure Cu or Au/Ni anodes were also examined. To test the thermal stability, selected devices were subjected to subsequent annealing steps in vacuum at incremental temperatures up to 900 °C. The Cu/M–Si anodes showed significantly better thermal stability than the single-layer Cu contact, and in most cases exceeded the stability of the reference Au/Ni contact. The work functions of the sputtered thin layers were determined to support the discussion of the formation mechanism of the Schottky barrier. It was concluded that the barrier heights were dependent on the M–Si composition, although they were not dependent on the work function of the layers. An extended, unified Schottky barrier formation model served as the basis for explaining the complex electrical behavior of the devices under investigation.
科研通智能强力驱动
Strongly Powered by AbleSci AI