TCAD Analysis of the Impact of the Metal-Semiconductor Junction Properties on the Forward Characteristics of MPS/JBS SiC Diodes

In this paper the effect of different types of anode contacts is analyzed through TCAD simulations for Schottky, PiN and MPS/JBS diodes. Several case-studies are investigated and it is found that an accurate selection of the Schottky barrier height is necessary to allow the onset of the bipolar conduction in MPS devices. Moreover, tuning the Schottky barrier height allows to achieve different levels of conductivity modulation when the PiN region is forward biased.