高电子迁移率晶体管
电容器
转换器
功率密度
功率(物理)
电气工程
氮化镓
材料科学
降压式变换器
光电子学
半导体
电子工程
计算机科学
晶体管
工程类
物理
电压
纳米技术
量子力学
图层(电子)
作者
Jinfeng Zhang,Zhuxuan Tian,Zhenshuai Rong,Yueshi Guan,Yijie Wang,Dianguo Xu
标识
DOI:10.1109/ieacon55029.2022.9951765
摘要
This paper applies GaN HEMT to series capacitor buck converters and increases the switching frequency to 1MHz, greatly improving the power density of the converter. The advantages brought by the new wide-bandgap semiconductor device were analyzed, the driving circuit was optimized, and a 1MHz improved two-phase Buck high-frequency converter with 48V input, 12V/240W output and peak efficiency of 98.5% was designed and built. The effective power density reaches 218.5 W/in 3 .In the rated state, the efficiency of the prototype is 93.4%.
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