Nonlinear effect of carbon cluster induced damage in silicon

Carbon clusters Cn for n=1 up to 10 were obtained from a SNICS ion source. The clusters with the same velocity were implanted into silicon crystal. We have observed a nonlinear effect on radiation damage of silicon due to the size of the cluster ions. The larger the size of the cluster ions, the larger the radiation damage after being normalized with the atomic dosage. The dependence of the damage on the implantation dosage was also studied. The quantitative characterization of the damage was performed by RBS/Channeling analysis and the nonlinear effect in the cluster-solid interaction will be presented.