Preparation and Properties of SiO2 Films from SiH4 ‐ CO 2 ‐ H 2

This paper presents the results of chemical vapor deposited (CVD) silicon dioxide films on silicon from an system. The kinetics of this reaction have been studied with a barrel reactor. The activation energy (ΔE) of the , reaction in hydrogen is 106.7 J/g mol (25.4 kcal/g mol) in the temperature range 800°–1050°C. The and reaction in hydrogen is shown to be a first‐order reaction with respect to . The deposition rates of are dependent only on deposition temperature and on mole fraction. They are independent of the ratio in the experimental range of 7:1–120:1. Electrical characterization was carried out on MOS capacitors of ∼1300Å dielectric thickness. The breakdown field was found to be. Measurements of oxide charges, of mobile charges, and of fast surface‐state density show that these oxides are stable under positive and negative bias, with maximum shifts of 250 mV after 50 hr stress at 200°C and electrical field. Postdeposition high‐temperature anneal deteriorates the stability under negative‐bias temperature stress. The index of refraction depends on the ratio, going above 1.46 at a ratio <10. Ratios of give reproducible results at an average index of . Etch rates in "P‐etch" for 1000°C deposited samples are ∼50% faster than thermal oxides grown at the same temperature.