等离子体增强化学气相沉积
退火(玻璃)
二氧化硅
材料科学
硅
空隙(复合材料)
化学气相沉积
复合材料
纳米技术
光电子学
作者
Paul Baine,Michael Bain,David McNeill,H.S. Gamble,Mervyn Armstrong
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2006-10-20
卷期号:3 (6): 165-173
被引量:4
摘要
The bonding of plasma enhanced chemical vapor deposition (PECVD) silicon dioxide layers, deposited at 300oC, to thermal silicon dioxide layers is described. The PECVD oxide requires pre-bond annealing and CMP for void free bonding. Post bond annealing for bond strengthening must be performed at a lower temperature than the pre-bond annealing step. Bond strengths of 1J/m2 have been achieved after bond annealing at 400oC. This bonding method can be used in layer/circuit transfer and has been demonstrated with the transfer of a 2µm SOI layer from one substrate to another.
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