纳米棒
拉曼光谱
X射线光电子能谱
材料科学
光致发光
兴奋剂
分子束外延
分析化学(期刊)
价(化学)
声子
光电子学
纳米技术
化学
核磁共振
外延
光学
图层(电子)
凝聚态物理
物理
有机化学
色谱法
作者
Rajendra Kumar,Sanjay Nayak,S. M. Shivaprasad
标识
DOI:10.1088/2053-1591/ab3cb6
摘要
We study the native charge compensation effect in Mg doped GaN nanorods (NRs), grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE), using Raman, photoluminescence (PL) and X-ray photoelectron spectroscopies (XPS). The XPS valence band analysis shows that upon Mg incorporation the E$_F$-E$_{VBM}$ reduces, suggesting the compensation of the native n-type character of GaN NRs. Raman spectroscopic studies on these samples reveal that the line shape of longitudinal phonon plasmon (LPP) coupled mode is sensitive to Mg concentration and hence to background n-type carrier density. We estimate a two order of native charge compensation in GaN NRs upon Mg-doping with a concentration of 10$^{19}$-10$^{20}$ atoms cm$^{-3}$. Room temperature (RT) PL measurements and our previous electronic structure calculations are used to identify the atomistic origin of this compensation effect.
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