Performance Prediction of a Quantum Well Infrared Photodetector Using GeSn/SiGeSn Structure

QWIP using group IV elements have created more interest among researchers for its potential application in optical communication as well as in optical interconnects. This paper presents modeling and theoretical analysis of Sn-based tensile strained type I direct band gap QWIP in which the active region has a multiple quantum well structure formed with Ge0.92Sn0.08 quantum wells separated by Si0.11Ge0.7Sn0.19 barriers. The structure reported by V. Ryzhii et al. has been reproduced and the parameters like responsivity, power density and the dark current density have been analytically calculated. A comprehensive comparison of responsivity and power density of this proposed structure with the existing QWIP structure made of GaAs/InGaAs is reported here. An improvement in the field of responsivity is observed with the proposed model. The reduction of threshold power density corresponds to an effective operation of the QWIPs in incident infrared radiation. The intersubband electron transition and tunneling electron injection effects are considered here to predict a better performance of the proposed structure operated in infrared region.