热电效应
凝聚态物理
材料科学
玻尔兹曼常数
铋
拓扑(电路)
费米能级
GSM演进的增强数据速率
玻尔兹曼方程
物理
量子力学
组合数学
冶金
电子
电信
计算机科学
数学
作者
Muhammad Gaffar,Sasfan Arman Wella,Eddwi H. Hasdeo
出处
期刊:Physical review
日期:2021-11-08
卷期号:104 (20)
被引量:8
标识
DOI:10.1103/physrevb.104.205105
摘要
Two-dimensional bismuth (Bi) layer, known as bismuthene, exhibits $Z2$ topological bulk states due to large spin-orbit coupling that inverts the bands. Using the tight-binding method, we calculate the band structure of buckled bismuthene to understand its topological and trivial phases. We determine the thermoelectric properties for some considered phases, incorporating the edge states contribution, by using the linearized Boltzmann transport equation with a constant relaxation time approximation. It is shown that the thermoelectric figure of merit, $ZT$, actually drops in undoped topological bismuthene due to the edge effects. Surprisingly, the topological edge states enhance $ZT$ at large doping with the Fermi energy near the bottom of bulk bands when bismuthene is nearly metallic.
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