光电二极管
暗电流
异质结
泄漏(经济)
光电子学
带隙
接受者
材料科学
费米能级
光电探测器
凝聚态物理
物理
电子
量子力学
宏观经济学
经济
作者
Himanshu Shekhar,Olga Solomeshch,Dan Liraz,Nir Tessler
摘要
It is often suggested that the dark leakage current of organic photodiodes is due to extrinsic leakage paths that do not involve the electronic junction. By studying a series of devices, where the acceptor is kept constant (C70) and the donor material is varied, we find a direct correlation between the strength of the sub-gap signature of the charge-transfer states and the leakage current. Attributing the differences in the sub-gap absorption to the donor's sub-gap states suggests that the donor's side of the junction should be made longer, to push the Fermi level at V = 0 towards the acceptor's LUMO, and thus, an optimized value of 800 Pacm−2 at V = −1 V is reported.
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