凝聚态物理
磁性
范霍夫奇点
单层
铁磁性
磁矩
态密度
兴奋剂
材料科学
物理
费米能级
纳米技术
电子
量子力学
作者
Ting Cao,Zhenglu Li,Steven G. Louie
标识
DOI:10.1103/physrevlett.114.236602
摘要
We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0 μB per carrier in a range of 3×10(13)/cm(2)-1×10(14)/cm(2), with the system in a half-metal state before the moment starts to descend abruptly. The predicted itinerant magnetism originates from an exchange splitting of electronic states at the top of the valence band, where the density of states exhibits a sharp van Hove singularity in this quasi-two-dimensional system.
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