Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

This study focuses on the characterization of silicon dioxide (SiO 2 ) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities ( D IT ) of 1 * 10 11 cm -2 eV -1 under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.