材料科学
钨
机制(生物学)
氧化钨
扩散
氧化物
纳米技术
空位缺陷
薄膜
半导体
化学工程
化学物理
光电子学
冶金
化学
结晶学
热力学
认识论
物理
工程类
哲学
作者
Mei Han Wang,Hao Lei,Jia Xing Wen,Yutaka Sawada,Y. Hoshi,Takayuki Uchida,Zhao Xia Hou
出处
期刊:Advanced Materials Research
日期:2014-12-01
卷期号:1070-1072: 471-474
标识
DOI:10.4028/www.scientific.net/amr.1070-1072.471
摘要
The gasochromic effect and its potential applications of tungsten oxide (WO 3 ) thin films are introduced. The research progress in gasochromics mechanism of WO 3 films is reviewed and various mechanism models are summarized and discussed. The double injection model, oxygen vacancy diffusion model and localized water molecules model are extensively used to explain the gasochromic coloration of WO 3 films. A perspective on the gasochromics mechanism development of WO 3 films is tended to fabricate WO 3 film with single crystal and regular structure, which may simply the quantitative characterizations induced by the complicated structure. Elucidating gasochromics mechanism of WO 3 films not only helps to understand gasochromic coloration phenomenon well but also improves the performance of gasochromic coloration devices. It also accelerates the development of the relative science, such as gas detector, atom/ion transport material, surface catalysis of semiconductor, and so on.
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