Threshold energy effect on avalanche breakdown voltage in semiconductor junctions

The band bending for avalanche breakdown in semiconductor junctions and its temperature dependence are predicted taking account of threshold energy effects on the ionization process in semiconductors. Where experimental results exist, the theoretical predictions and experimental results are in excellent agreement. In the high electric field region inclusion of both bulk and boundary threshold energy effects is essential. The predictions were based on exact solutions in the nonlocalized ionization coefficient formulation developed by Okuto and Crowell who showed that ionization coefficients as usually understood are functions of both electric field and position in a device. Predictions for abrupt and p-i-n junctions in Ge, Si, GaAs and GaP are presented.