喷射(流体)
弧(几何)
材料科学
MESFET
钻石
光电子学
复合材料
机械
电气工程
物理
机械工程
工程类
晶体管
场效应晶体管
电压
作者
J.L. Liu,C.M. Li,R.H. Zhu,Jianchao Guo,L.X. Chen,Junjun Wei,L.F. Hei,J.J. Wang,Zhihong Feng,Hui Guo,Fengting Lv
标识
DOI:10.1016/j.apsusc.2013.08.011
摘要
Abstract Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4 in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14 μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2 μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6 cm2/V s and the carrier density of 1.096 × 1013 cm−2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (fT) of 5 GHz and the maximum oscillation frequency (fmax) of 6 GHz at VGS = −0.5 V and VDS = −8 V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.
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