单色
同步辐射
Burgers向量
同步加速器
位错
材料科学
光学
GSM演进的增强数据速率
结晶学
凝聚态物理
基面
物理
化学
计算机科学
电信
作者
Hirofumi Matsuhata,Hiroshi Yamaguchi,Toshiyuki Ohno
标识
DOI:10.1080/14786435.2012.716168
摘要
Contrasts of dislocations in the sub-surface region of the Si-face of a 4H-SiC wafer were observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry. Basal-plane dislocations show very characteristic contrast depending on their Burgers vectors, running directions, and types of dislocations, whether they are screw dislocations, C-core edge dislocations, or Si-core edge dislocations. The rules for contrasts of basal-plane dislocations are summarized. It is shown that by observing those contrasts at fixed diffraction conditions, Burgers vectors of the basal-plane dislocation can be identified without performing a g · b analysis in some cases. Threading edge dislocations also have very characteristic contrasts depending on the angles between the projected g and their Burgers vectors. It is shown that Burgers vectors of threading edge dislocations can be determined uniquely by observing their characteristic contrasts without performing g · b analysis. Contrast mechanisms fo...
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