材料科学
半导体
纳米技术
钻石
带隙
宽禁带半导体
工程物理
光子学
表征(材料科学)
光电子学
半导体材料
数码产品
物理
电气工程
工程类
复合材料
作者
Mingfei Xu,Dawei Wang,Kai Fu,Dinusha Herath Mudiyanselage,Houqiang Fu,Yuji Zhao
标识
DOI:10.1093/oxfmat/itac004
摘要
Abstract Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-BN) and AlN, are a new class of semiconductors that possess a wide range of attractive properties, including very large bandgap, high critical electric field, high carrier mobility and chemical inertness. Due to these outstanding characteristics, UWBG materials are promising candidates to enable high-performance devices for power electronics, ultraviolet photonics, quantum sensing and quantum computing applications. Despite their great potential, the research of UWBG semiconductors is still at a nascent stage and represents a challenging interdisciplinary research area of physics, materials science and devices engineering. In this review, the material properties, synthesis methods and device applications of UWBG semiconductors diamond, Ga2O3, h-BN and AlN will be presented and their recent progress, challenges and research opportunities will be discussed.
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