神经形态工程学
材料科学
石墨烯
电阻随机存取存储器
焦耳加热
记忆电阻器
纳米技术
计算机科学
光电子学
作者
Revannath Dnyandeo Nikam,Jongwon Lee,Woosel k Choi,Dongmin Kim,Hyunsang Hwang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2022-07-19
卷期号:16 (8): 12214-12225
标识
DOI:10.1021/acsnano.2c02913
摘要
An artificial synapse based on oxygen-ion-driven electrochemical random-access memory (O-ECRAM) devices is a promising candidate for building neural networks embodied in neuromorphic hardware. However, achieving commercial-level learning accuracy in O-ECRAM synapses, analog conductance tuning at fast speed, and multibit storage capacity is challenging because of the lack of Joule heating, which restricts O2- ionic transport. Here, we propose the use of an atomically thin heater of monolayer graphene as a low-power heating source for O-ECRAM to increase thermally activated O2- migration within channel-electrolyte layers. Heating from graphene manipulates the electrolyte activation energy to establish and maintain discrete analog states in the O-ECRAM channel. Benefiting from the integrated graphene heater, the O-ECRAM features long retention (>104 s), good stability (switching accuracy <98% for >103 training pulses), multilevel analog states for 6-bit analog weight storage with near-ideal linear switching, and 95% pattern-identification accuracy. The findings demonstrate the usefulness of 2D materials as integrated heating elements in artificial synapse chips to accelerate neuromorphic computation.
科研通智能强力驱动
Strongly Powered by AbleSci AI