有机发光二极管
串联
材料科学
二极管
光电子学
兴奋剂
氧化物
图层(电子)
纳米技术
冶金
复合材料
作者
Yongbiao Zhao,Swee Tiam Tan,Hilmi Volkan Demir,Xiao Wei Sun
标识
DOI:10.1016/j.orgel.2015.04.010
摘要
Tandem organic light-emitting diodes (OLEDs) have been studied to improve the long-term stability of OLEDs for 10 years. The key element in a tandem OLEDs is the charge generation layer (CGL), which provides electrons and holes to the adjacent sub-OLED units. Among different types of CGLs, n-doped electron transporting layer (ETL)/transition metal oxide (TMO)/hole transporting layer (HTL) has been intensively studied. Past studies indicate that this kind of CGL can achieve the desired efficiency enhancement, however, its long-term stability was reported not good and sometime even poor than a single OLED. This issue was not well addressed over the past 10 years. Here, for the first time, we found that this is caused by the unwanted diffusion of TMO into the underlying n-doped ETL layer and can be well resolved by introducing an additional diffusion suppressing layer (DSL) between them. Our finding will fully release the potential of TMO-based CGL in tandem OLEDs.
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