The Effect of Annealing Treatment on the Distribution of Deuterium in Silicon and in Silicon/Silicon Oxide Systems

The effect of annealing treatment on the distribution of deuterium in silicon and silicon/silicon oxide systems was studied. The concentration of deuterium implanted into Si decreases as the annealing temperature increases and finally drops to the background level at 600°C. In a silicon/silicon oxide system, the concentration of implanted deuterium in oxides also decreases as the annealing temperature increases, and drops to the background level at 900°C. The diffusion coefficient of deuterium in silicon oxide was estimated to be .