退火(玻璃)
形成气体
X射线光电子能谱
原子层沉积
氧化物
氢
材料科学
分析化学(期刊)
金属
电容器
电容
铝
半导体
化学
薄膜
光电子学
化学工程
冶金
纳米技术
电压
电极
物理化学
电气工程
有机化学
色谱法
工程类
作者
Hai-Dang Trinh,E.Y. Chang,Pu‐Wei Wu,Yung-Hao Wong,C. T. Chang,Yuan‐Tsu Hsieh,Chia-Chi Yu,Hong-Quan Nguyen,Y. C. Lin,Kuei-Huei Lin,Mantu K. Hudait
摘要
The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (Dit) at lower half-part of In0.53Ga0.47As band gap. This low Dit was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides.
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