异质结
材料科学
非晶硅
硅
光电子学
晶体硅
亚氧化物
无定形固体
带偏移量
半金属
纳米晶硅
带隙
价带
化学
结晶学
作者
Mathias Mews,Martin Liebhaber,B. Rech,Lars Korte
摘要
To investigate the hole transport across amorphous/crystalline silicon heterojunctions, solar cells with varying band offsets were fabricated using amorphous silicon suboxide films. The suboxides enable good passivation if covered by a doped amorphous silicon layer. Increasing valence band offsets yield rising hole transport barriers and reduced device efficiencies. Carrier transport by thermal emission is reduced and tunnel hopping through valence band tail states increases for larger barriers. Nevertheless, stacks of films with different band gaps, forming a band offset staircase at the heterojunction, could allow the application of these layers in silicon heterojunction solar cells.
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