The relationship between carrier mobility and bicrystalline grains boundary of rutile TiO2 film

The rutile titanium dioxide (TiO 2 ) has attracted enormous interest in sensor field owing to its stability at high temperature. But less is known about electron transfer efficiency of rutile TiO 2 , which is mainly influenced by the electron mobility. The aim of this study is to investigate the relationship between carrier mobility and bicrystalline grains boundary of rutile TiO 2 film. In this study, TiO 2 film was deposited by the direct current pulsed magnetron sputtering technology with sputtering power from 150 to 900 W. Then the TiO 2 films were annealed at [Formula: see text] in air atmosphere. By this way, the rutile TiO 2 films were obtained. Special attention was paid to the carrier mobility of rutile TiO 2 films. The Hall measurement results showed that with the increase of sputtering power from 150 to 900 W, the carrier mobility of rutile TiO 2 films increased from 0.75 to [Formula: see text], gradually. Taking the TEM and SAED results together, our data indicated that the carrier mobility of rutile TiO 2 film was influenced by the bicrystalline grains boundary. The large angle bicrystalline grain boundary seriously deteriorates the carrier mobility of rutile TiO 2 film. On the contrary, the low angle bicrystalline grain boundary has little influence on the carrier mobility of rutile TiO 2 film.