光探测
光电探测器
材料科学
光电子学
钻石
光电二极管
紫外线
肖特基势垒
带隙
异质结
载流子
半导体
二极管
复合材料
作者
Ying‐Jie Lu,Chaonan Lin,Chongxin Shan
标识
DOI:10.1002/adom.201800359
摘要
Abstract Deep ultraviolet photodetectors have attracted much attention due to their wide applications in the industrial, military, biological and environmental fields. Diamond has a variety of unique characteristics, including a wide bandgap, high thermal conductivity, high breakdown voltage, high carrier mobility, and high radiation hardness, which make it a promising candidate for deep ultraviolet photodetection. With the development of diamond synthesis technology, diamond‐based photodetectors have been extensively studied. This study reviews the recent progress involving various types of diamond‐based photodetectors, including photoconductors, metal–semiconductor–metal photodiodes, Schottky barrier photodiodes, p–n, and p–i–n photodiodes, heterojunctions, and phototransistors.
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