材料科学
异质结
兴奋剂
等离子体子
光电探测器
纳米颗粒
杂质
光电子学
吸收(声学)
聚合物
纳米技术
化学工程
化学
复合材料
有机化学
工程类
作者
Rup K. Chowdhury,Tridib Kumar Sinha,Ajit K. Katiyar,S. K. Ray
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2017-01-01
卷期号:9 (40): 15591-15597
被引量:31
摘要
Chemical doping and plasmonic enhanced photoresponsivity of two dimensional (2D) n-WS2/p-Si heterojunctions are demonstrated for the first time. Novel PVP coated Ag0 intercalation induced synthesis has led to the formation of impurity-free, chemically doped few-layer n-WS2 with reversed conductivity following the Maxwell-Wagner-Sillars interfacial effect. The resultant composite film exhibits excellent stability and tunable plasmonic absorption due to silver nanoparticles of different sizes. A sharp band-edge absorption of the hybrid material indicates the presence of spin-orbit coupled direct band gap transitions in WS2 layers, in addition to a broader plasmonic peak attributed to Ag nanoparticles. Stabilized Ag-nanoparticle (∼4-6 nm) embedded electron rich n-WS2 has been used to fabricate plasmon enhanced, silicon compatible heterojunction photodetectors. The detectors exhibited superior properties, possessing a photo-to-dark current ratio of ∼103, a very high responsivity (8.0 A W-1) and an EQE of 2000% under 10 V bias with a broad spectral photoresponse in the wavelength range of 400-1100 nm. The results provide a new paradigm for intercalant impurity-free metal nanoparticle assisted exfoliation of n-type few-layer WS2, with the nanoparticles playing a dual role towards the realization of 2D materials based broadband heterojunction optoelectronic devices by inducing chemical doping as well as tunable plasmon enhanced absorption.
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