The wide range optical spectrum characterization of the silicon and oxygen doped diamond like carbon inhomogeneous thin films

Optical characterization from the FIR to the V-UV region of silicon and oxygen doped carbon films deposited on a silicon substrates is performed. In this work, the deposited films are considered as optically inhomogeneous, i.e., the optical constants depend on the depth in the films. According to the optical analysis, there is a transition layers under the deposited films with optical constants similar to amorphous silicon with hydrogen, carbon and oxygen additions. The film thicknesses obtained from optical characterization are compared with those obtained from scanning electron microscope images. From electron microscope images it is evident that the film properties are truly depth-dependent. The optical constants of the films and transition layers as functions of photon energy over the studied spectrum are determined. The static conductivity of the films is determined from measurements in FIR region. From spectral analysis in the mid-infrared region, resonance peaks were detected and the chemical composition of the film and transition layers is presented. The chemical composition is compared with the results of the EDX.