Lifetime Control Free Cathode Side Concept for Si-Based Power Diode Targeting High-Speed Operation and High Dynamic Ruggedness

We present the first advanced power diode technology that matches the diameter of a large Si wafer (≥200mm). Our proposed diode consists of a new cathode with a thin wafer process-induced crystal defect layer and a double-implanted layer in combination with a relaxed field of cathode technology. The new diode demonstrates high-speed operation, a low cross-point current, a low junction leakage current, and improved dynamic robustness without a lifetime control technique. The thermal stability of the proposed cathode concept is equal to that of a defect free power diode. The proposed cathode concept further evolves the RFC diode technology.