铁电性
材料科学
单斜晶系
正交晶系
电介质
切换时间
凝聚态物理
电场
外延
极化(电化学)
相(物质)
光电子学
结晶学
纳米技术
晶体结构
化学
物理
物理化学
图层(电子)
量子力学
有机化学
作者
Tingfeng Song,F. Sánchez,Ignasi Fina
出处
期刊:APL Materials
[American Institute of Physics]
日期:2022-03-01
卷期号:10 (3)
被引量:6
摘要
Determining the switching speed and mechanisms in ferroelectric HfO2 is essential for applications. Switching dynamics in orthorhombic epitaxial ferroelectric Hf0.5Zr0.5O2 films with either significant or negligible presence of monoclinic paraelectric phase is characterized. Switching spectroscopy reveals that the polarization dynamics in pure orthorhombic ferroelectric phase films can be modeled by the Kolmogorov–Avrami–Ishibashi mechanism with large characteristic time (≈1 µs), which is shortened in fatigued junctions. The long switching time indicates that non-archetypical switching mechanisms occur and that ionic motion or other extrinsic contributions might be at play. Films containing a higher amount of paraelectric monoclinic phase show a shorter switching time of 69 ns, even in pristine state, for applied electric field parallel to the imprint field, enabling synaptic-like activity using fast electric stimuli. Thus, the presence of defects or paraelectric phase is found to improve the switching speed, contrary to what one can expect a priori.
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