Liquid-Metal-Printed Ultrathin Channel In2O3 Transistors for Large Area Transparent Electronics

We present a scalable liquid metal printing process for unlocking the ultra-high mobility of two-dimensional (2D) conducting oxides for transparent flexible electronics. These ultrathin (2-5 nm) semiconductor channel materials are rapidly printed from the native surface oxide of molten indium. Quantum confinement and post-annealing control the electronic density of states, leading to thin film transistors with exceptional mobility (μ 0 > 65 cm ² /Vs) and low hysteresis, suitable for high-performance, large-area electronics such as flexible displays, active interposers, and low-cost sensors.