物理
拓扑绝缘体
联轴节(管道)
拓扑(电路)
结晶学
凝聚态物理
材料科学
组合数学
化学
数学
冶金
作者
Siyuan Liu,Huabing Yin,David J. Singh,Peng-Fei Liu
出处
期刊:Physical review
日期:2022-05-16
卷期号:105 (19)
被引量:22
标识
DOI:10.1103/physrevb.105.195419
摘要
Using the first-principles calculations, we present a prediction of the nontrivial topological phase in one-dimensional (1D) ${\mathrm{Ta}}_{4}{\mathrm{SiTe}}_{4}$ with high stability further verified by the molecular dynamics simulation and phonon spectrum. In this material, the band inversion intrinsically occurs between $\mathrm{Ta}\text{\ensuremath{-}}d$ and $\mathrm{Te}\text{\ensuremath{-}}p$ orbitals without the spin-orbit coupling effect. As a novel topological insulator, protected by time-reversal symmetry Tˆ and inversion symmetry Pˆ, we explicitly demonstrate the existence of nontrivial topological invariants and the protected edge states in it with a large bulk band gap of $\ensuremath{\sim}163\phantom{\rule{0.28em}{0ex}}\mathrm{meV}$, which could facilitate the experimental verification at the room temperature. In addition, we find its topological states are robust against the external pressure. Our results uncover a potential 1D topological-insulating ${\mathrm{Ta}}_{4}{\mathrm{SiTe}}_{4}$ and promote it as a concrete material platform for exploring the intriguing physics of low-dimensional topological phases.
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