欧姆接触
当前拥挤
材料科学
肖特基二极管
肖特基势垒
电阻率和电导率
图层(电子)
电接点
电流(流体)
导电体
表面光洁度
接触电阻
电流密度
量子隧道
光电子学
纳米技术
电子工程
电气工程
复合材料
物理
工程类
二极管
量子力学
作者
Sneha Banerjee,Peng Zhang
标识
DOI:10.1109/ivec51707.2021.9722447
摘要
Highly conductive nanoscale electrical contacts suffer from strong current crowding and local hot spots due to nonuniform heat distribution, which severely affect the device properties. Here, we demonstrate a method to control the contact current distribution, by engineering the contact layer properties and geometry. From transmission line model calculations, we found that the contact current density greatly depends on the properties of the interfacial layer between two contacting members. The nonuniformity of the current distribution can be reduced significantly by strategically designing the interfacial layer specific contact resistivity p c . The acute current crowding in ohmic contacts can be reduced greatly by parabolically varying the p c along contact length, or by introducing a tunneling layer between the contact members. We also found that the current transport for 2D material based Schottky contacts can be improved by roughness engineering.
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